2001. 6. 27 1/2 semiconductor technical data ktc811t epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features excellent h fe linearity : h fe (2)=25(min.) at v ce =6v, i c =400ma. complementary to kta711t. maximum rating (ta=25 ) dim millimeters a b d e ts6 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k 0.60 l 0.55 a f g g d k k b e c l h j j i 2 3 5 16 4 + _ + _ + _ + _ + _ 1. q emitter 2. q base 3. q collector 4. q emitter 5. q base 6. q collector 1 1 2 2 2 1 electrical characteristics (ta=25 ) note : h fe (1) classification 0:70 140, y:120 240 h fe (2) classification 0:25min., y:40min. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (1) (note) v ce =1v, i c =100ma 70 - 240 h fe (2) (note) v ce =6v, i c =400ma 25 - - collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v base-emitter voltage v be v ce =1v, i c =100ma - 0.8 1.0 v transition frequency f t v ce =6v, i c =20ma - 300 - mhz collector output capacitance c ob v cb =6v, i e =0, f=1mhz - 7.0 - pf characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current i c 500 ma emitter current i e -500 ma collector power dissipation p c * 0.9 w junction temperature t j 150 storage temperature range t stg -55 150 * package mounted on a ceramic board (600 0.8 ) 1 q1 q2 23 65 4 h rank fe type name marking lot no. l 123 654 equivalent circuit (top view)
2001. 6. 27 2/2 ktc811t revision no : 0 collector current i (ma) c collector-emitter voltage v (v) ce dc current gain h fe collector current i (ma) c be base-emitter voltage v (v) base current i ( a) collector-emitter saturation ce(sat) collector current i (ma) c common emitter ta=25 c 3.0 common emitter common emitter v =6v ce voltage v (v) common emitter i /i =10 cb b 0 0 ce c i - v 10 500 300 10 0.5 h - i i - v 0 2k 5 1 0.01 1 k 300 1 0.5 v - i 12345 100 200 300 400 500 6.0 4.0 2.0 1.0 0.5 i =0.1ma b 0 fe c 1100 330 30 50 100 300 ta=100 c v =6v ce ta=-25 c ta=25 c ce v =1v 0.2 0.4 0.6 0.8 1.0 10 30 50 100 300 500 1k t a=100 c ta=25 c ta=-25 c ce(sat) c 310 30100 0.03 0.05 0.1 0.3 0.5 ta=100 c ta=25 c ta=-25 c 1k bbe c collector power dissipation p (w) ambient temperature ta ( c ) 0 0 pc - ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 mounted on a ceramic board (600mm ` 0.8mm) 2
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